+1 500 000 products in offer

6000 packages per day

+300 000 clients from 150 countries

Quick Buy Favourites
Cart

We've added a new feature that allows you to schedule a meeting with a consultant. You can find it at the following link: Book an online meeting.

No surprise tariffs – what You see is what You pay

Here you will find out more

GD200HFX65C8S

Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A

Manufacturer: STARPOWER SEMICONDUCTOR

Manufacturer part number:
GD200HFX65C8S
TME Symbol:
GD200HFX65C8S

Specification

Manufacturer
STARPOWER SEMICONDUCTOR
Type of semiconductor module
IGBT
Semiconductor structure
transistor/transistor
Topology
IGBT half-bridge
Max. off-state voltage
650V
Collector current
200A
Case
C8 48mm
Electrical mounting
FASTON connectors, screw
Gate-emitter voltage
±20V
Pulsed collector current
400A
Technology
Trench FS IGBT
Mechanical mounting
screw
Gross weight200 g
Certificates
WarningThis product may expose you to chemicals known by the state of California to cause cancer or reproductive harm, for more information go to www.P65Warnings.ca.gov
See other products in this category: IGBT modules STARPOWER SEMICONDUCTOR,
*
GD200HFX65C8S
0 in TME stock
No. of pieces (Multiplicity: 16)
Product for special order