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GD300HFX170C2S

Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A

Manufacturer: STARPOWER SEMICONDUCTOR

Manufacturer part number:
GD300HFX170C2S
TME Symbol:
GD300HFX170C2S

Specification

Manufacturer
STARPOWER SEMICONDUCTOR
Type of semiconductor module
IGBT
Semiconductor structure
transistor/transistor
Topology
IGBT half-bridge
Max. off-state voltage
1.7kV
Collector current
300A
Case
C2 62mm
Electrical mounting
FASTON connectors, screw
Gate-emitter voltage
±20V
Pulsed collector current
600A
Technology
Trench FS IGBT
Mechanical mounting
screw
Gross weight300 g
Certificates
WarningThis product may expose you to chemicals known by the state of California to cause cancer or reproductive harm, for more information go to www.P65Warnings.ca.gov
See other products in this category: IGBT modules STARPOWER SEMICONDUCTOR,
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GD300HFX170C2S
0 in TME stock
Net price for quantities from 12 pcs - 134.14 USDGross price for quantities from 12 pcs - 134.14 USD
No. of pieces (Multiplicity: 12)
Prices quoted include customs duties and tariffs