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GD300HFX65C8SN

Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A

Manufacturer: STARPOWER SEMICONDUCTOR

Manufacturer part number:
GD300HFX65C8SN
TME Symbol:
GD300HFX65C8SN

Specification

Manufacturer
STARPOWER SEMICONDUCTOR
Type of semiconductor module
IGBT
Semiconductor structure
transistor/transistor
Topology
IGBT half-bridge
Max. off-state voltage
650V
Collector current
300A
Case
C8 48mm
Electrical mounting
FASTON connectors, screw
Gate-emitter voltage
±20V
Pulsed collector current
600A
Technology
Trench FS IGBT
Mechanical mounting
screw
Gross weight200 g
Certificates
See other products in this category: IGBT modules STARPOWER SEMICONDUCTOR,
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GD300HFX65C8SN
0 in TME stock
Net price for quantities from 16 pcs - 63.33 USDGross price for quantities from 16 pcs - 63.33 USD
No. of pieces (Multiplicity: 16)
Prices quoted include customs duties and tariffs