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Manufacturer	INFINEON TECHNOLOGIES
Type of transistor	IGBT
Technology	Field Stop, Trench
Collector-emitter voltage	600V
Collector current	8A
Power dissipation	36.6W
Case	DPAK
Gate-emitter voltage	±20V
Pulsed collector current	12A
Mounting	SMD
Gate charge	24nC
Turn-off time	90ns

IKD04N60RC2ATMA1

Transistor: IGBT; Field Stop; 600V; 8A; 36.6W; DPAK

Specification