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IRFBE30LPBF

Transistor: N-MOSFET; unipolar; 800V; 2.6A; Idm: 16A; 125W

Manufacturer: VISHAY

Manufacturer part number:
IRFBE30LPBF
TME Symbol:
IRFBE30LPBF

Specification

Manufacturer
VISHAY
Type of transistor
N-MOSFET
Polarisation
unipolar
Drain-source voltage
800V
Drain current
2.6A
Pulsed drain current
16A
Power dissipation
125W
Case
I2PAK, TO262
Gate-source voltage
±20V
On-state resistance
Mounting
THT
Gate charge
78nC
Kind of package
tube
Kind of channel
enhancement
Gross weight2 g
Certificates
WarningThis product may expose you to chemicals known by the state of California to cause cancer or reproductive harm, for more information go to www.P65Warnings.ca.gov
See other products in this category: THT N channel transistors VISHAY,
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IRFBE30LPBF
0 in TME stock
Net price for quantities from 1 pcs - 2.97 USDGross price for quantities from 1 pcs - 2.97 USD
Net price for quantities from 5 pcs - 2.22 USDGross price for quantities from 5 pcs - 2.22 USD
Net price for quantities from 10 pcs - 1.70 USDGross price for quantities from 10 pcs - 1.70 USD
Net price for quantities from 100 pcs - 1.17 USDGross price for quantities from 100 pcs - 1.17 USD
No. of pieces (Multiplicity: 1)
Prices quoted include customs duties and tariffs