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IXA20PG1200DHGLB

Module: IGBT; diode/transistor; IGBT half-bridge; Urmax: 1.2kV

Documentation EN
Documentation EN
Product family

Manufacturer: IXYS

Manufacturer part number:
IXA20PG1200DHGLB
TME Symbol:
IXA20PG1200DHGLB

Specification

Manufacturer
IXYS
Type of semiconductor module
IGBT
Semiconductor structure
diode/transistor
Topology
IGBT half-bridge
Max. off-state voltage
1.2kV
Collector current
23A
Case
SMPD-B
Electrical mounting
SMT
Gate-emitter voltage
±20V
Pulsed collector current
45A
Power dissipation
130W
Technology
ISOPLUS™, Sonic FRD™
Gross weight7.983 g
Certificates
WarningThis product may expose you to chemicals known by the state of California to cause cancer or reproductive harm, for more information go to www.P65Warnings.ca.gov
See other products in this category: IGBT modules IXYS,
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IXA20PG1200DHGLB
22 in TME stock
Net price for quantities from 1 pcs - 9.80 USDGross price for quantities from 1 pcs - 9.80 USD
Net price for quantities from 3 pcs - 8.60 USDGross price for quantities from 3 pcs - 8.60 USD
Net price for quantities from 10 pcs - 8.23 USDGross price for quantities from 10 pcs - 8.23 USD
No. of pieces (Multiplicity: 1)
Product available till the stock lasts
Prices quoted include customs duties and tariffs
Packaging method by the manufacturerTube = 20 pcs