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Manufacturer	IXYS
Type of semiconductor module	IGBT
Semiconductor structure	diode/transistor
Topology	boost chopper
Max. off-state voltage	1.2kV
Collector current	30A
Case	SMPD-B
Electrical mounting	SMT
Gate-emitter voltage	±20V
Pulsed collector current	75A
Power dissipation	147W
Technology	ISOPLUS™, Sonic FRD™

IXA30RG1200DHGLB

Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; SMT

Specification