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Manufacturer	IXYS
Type of semiconductor module	IGBT
Semiconductor structure	single transistor
Max. off-state voltage	1.2kV
Collector current	62A
Case	SOT227B
Electrical mounting	screw
Gate-emitter voltage	±20V
Pulsed collector current	124A
Power dissipation	450W
Technology	NPT
Features of semiconductor devices	high voltage
Mechanical mounting	screw

IXDN55N120D1

Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 62A; SOT227B

Specification