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IXDN75N120

Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 150A; SOT227B

Manufacturer: IXYS

Manufacturer part number:
IXDN75N120
TME Symbol:
IXDN75N120

Specification

Manufacturer
IXYS
Type of semiconductor module
IGBT
Semiconductor structure
single transistor
Max. off-state voltage
1.2kV
Collector current
150A
Case
SOT227B
Electrical mounting
screw
Gate-emitter voltage
±20V
Pulsed collector current
190A
Power dissipation
660W
Technology
NPT
Mechanical mounting
screw
Gross weight34.72 g
Certificates
WarningThis product may expose you to chemicals known by the state of California to cause cancer or reproductive harm, for more information go to www.P65Warnings.ca.gov
See other products in this category: IGBT modules IXYS,
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IXDN75N120
0 in TME stock
Net price for quantities from 1 pcs - 39.72 USDGross price for quantities from 1 pcs - 39.72 USD
No. of pieces (Multiplicity: 1)
Prices quoted include customs duties and tariffs
Packaging method by the manufacturerTube = 10 pcs