IXFN26N100P
Module; single transistor; 1kV; 23A; SOT227B; screw; Idm: 65A; 595W
Manufacturer: IXYS
Manufacturer part number:
IXFN26N100P
TME Symbol:
IXFN26N100P
Specification
Manufacturer | IXYS | |
Type of semiconductor module | MOSFET transistor | |
Semiconductor structure | single transistor | |
Drain-source voltage | 1kV | |
Drain current | 23A | |
Case | SOT227B | |
Electrical mounting | screw | |
Polarisation | unipolar | |
On-state resistance | 390mΩ | |
Pulsed drain current | 65A | |
Power dissipation | 595W | |
Technology | HiPerFET™, Polar™ | |
Kind of channel | enhancement | |
Gate charge | 197nC | |
Reverse recovery time | 300ns | |
Gate-source voltage | ±40V | |
Mechanical mounting | screw |
Gross weight37.04 g
Certificates
WarningThis product may expose you to chemicals known by the state of California to cause cancer or reproductive harm, for more information go to www.P65Warnings.ca.gov
See other products in this category: Transistor modules IXYS,
* IXFN26N100PNo. of pieces (Multiplicity: 1)
6 in TME stock
Net price for quantities from 1 pcs - 41.53 USDGross price for quantities from 1 pcs - 41.53 USD
Net price for quantities from 3 pcs - 36.66 USDGross price for quantities from 3 pcs - 36.66 USD
Net price for quantities from 10 pcs - 32.96 USDGross price for quantities from 10 pcs - 32.96 USD
Product available till the stock lasts
Prices quoted include customs duties and tariffs
Packaging method by the manufacturerTube = 10 pcs