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Manufacturer	IXYS
Type of semiconductor module	MOSFET transistor
Semiconductor structure	single transistor
Drain-source voltage	500V
Drain current	55A
Case	SOT227B
Electrical mounting	screw
Polarisation	unipolar
On-state resistance	80mΩ
Pulsed drain current	220A
Power dissipation	625W
Technology	HiPerFET™
Kind of channel	enhancement
Gate charge	330nC
Reverse recovery time	250ns
Gate-source voltage	±40V
Mechanical mounting	screw

IXFN55N50

Module; single transistor; 500V; 55A; SOT227B; screw; Idm: 220A

Specification