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Manufacturer	IXYS
Type of semiconductor module	MOSFET transistor
Semiconductor structure	single transistor
Drain-source voltage	900V
Drain current	56A
Case	SOT227B
Electrical mounting	screw
Polarisation	unipolar
On-state resistance	0.145Ω
Pulsed drain current	168A
Power dissipation	1kW
Technology	HiPerFET™, Polar™
Kind of channel	enhancement
Gate charge	375nC
Reverse recovery time	300ns
Gate-source voltage	±40V
Mechanical mounting	screw

IXFN56N90P

Module; single transistor; 900V; 56A; SOT227B; screw; Idm: 168A

Specification