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Manufacturer	IXYS
Type of semiconductor module	MOSFET transistor
Semiconductor structure	single transistor
Drain-source voltage	500V
Drain current	66A
Case	SOT227B
Electrical mounting	screw
Polarisation	unipolar
On-state resistance	65mΩ
Pulsed drain current	200A
Power dissipation	700W
Technology	HiPerFET™, PolarHV™
Kind of channel	enhancement
Gate charge	195nC
Reverse recovery time	200ns
Gate-source voltage	±30V
Mechanical mounting	screw

IXFN80N50P

Module; single transistor; 500V; 66A; SOT227B; screw; Idm: 200A

Specification