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NXH010P120M3F1PG

Module; transistor/transistor; 1.2kV; 105A; PIM18; Press-in PCB

Manufacturer: ONSEMI

Manufacturer part number:
NXH010P120M3F1PG
TME Symbol:
NXH010P120M3F1PG

Specification

Manufacturer
ONSEMI
Type of semiconductor module
MOSFET transistor
Semiconductor structure
transistor/transistor
Drain-source voltage
1.2kV
Drain current
105A
Case
PIM18
Topology
MOSFET half-bridge
Electrical mounting
Press-in PCB
On-state resistance
24.5mΩ
Pulsed drain current
316A
Power dissipation
272W
Technology
SiC
Gate-source voltage
-10...22V
Kind of package
in-tray
Mechanical mounting
screw
Gross weight100 g
Certificates
WarningThis product may expose you to chemicals known by the state of California to cause cancer or reproductive harm, for more information go to www.P65Warnings.ca.gov
See other products in this category: Transistor modules ONSEMI,
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NXH010P120M3F1PG
0 in TME stock
No. of pieces (Multiplicity: 28)
Product for special order