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STGP30M65DF2

Transistor: IGBT; 650V; 30A; 258W; TO220AB

Manufacturer: STMicroelectronics

Manufacturer part number:
STGP30M65DF2
TME Symbol:
STGP30M65DF2

Specification

Manufacturer
STMicroelectronics
Type of transistor
IGBT
Collector-emitter voltage
650V
Collector current
30A
Power dissipation
258W
Case
TO220AB
Gate-emitter voltage
±20V
Pulsed collector current
120A
Mounting
THT
Gate charge
80nC
Kind of package
tube
Features of semiconductor devices
integrated anti-parallel diode
Gross weight1.997 g
Certificates
See other products in this category: THT IGBT transistors STMicroelectronics,
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STGP30M65DF2
72 in TME stock
Net price for quantities from 1 pcs - 2.54 USDGross price for quantities from 1 pcs - 2.54 USD
Net price for quantities from 3 pcs - 2.29 USDGross price for quantities from 3 pcs - 2.29 USD
Net price for quantities from 10 pcs - 1.87 USDGross price for quantities from 10 pcs - 1.87 USD
Net price for quantities from 50 pcs - 1.41 USDGross price for quantities from 50 pcs - 1.41 USD
Net price for quantities from 100 pcs - 1.27 USDGross price for quantities from 100 pcs - 1.27 USD
Net price for quantities from 150 pcs - 1.23 USDGross price for quantities from 150 pcs - 1.23 USD
No. of pieces (Multiplicity: 1)
Prices quoted include customs duties and tariffs
Packaging method by the manufacturerTube = 50 pcs