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Manufacturer	INFINEON TECHNOLOGIES
Type of transistor	P-MOSFET x2
Technology	HEXFET®
Polarisation	unipolar
Drain-source voltage	-30V
Drain current	-4.9A
Power dissipation	2W
Case	SO8
Gate-source voltage	±20V
On-state resistance	98mΩ
Mounting	SMD
Gate charge	23nC
Kind of channel	enhancement

AUIRF7316QTR

Transistor: P-MOSFET x2; unipolar; -30V; -4.9A; 2W; SO8

Specification