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Manufacturer	INFINEON TECHNOLOGIES
Type of transistor	N/P-MOSFET
Technology	HEXFET®
Polarisation	unipolar
Drain-source voltage	55/-55V
Drain current	4.7/-3.4A
Power dissipation	4.7W
Case	SO8
Gate-source voltage	±20V
On-state resistance	43/95mΩ
Mounting	SMD
Kind of package	reel
Kind of channel	enhancement

AUIRF7343QTR

Transistor: N/P-MOSFET; unipolar; 55/-55V; 4.7/-3.4A; 4.7W; SO8

Specification