+1 500 000 products in offer

6000 packages per day

+300 000 clients from 150 countries

Quick Buy Favourites
Cart

We've added a new feature that allows you to schedule a meeting with a consultant. You can find it at the following link: Book an online meeting.

No surprise tariffs – what You see is what You pay

Here you will find out more

B2M065120Z

Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 33A; Idm: 85A; 250W

Manufacturer: BASiC SEMICONDUCTOR

Manufacturer part number:
B2M065120Z
TME Symbol:
B2M065120Z

Specification

Manufacturer
BASiC SEMICONDUCTOR
Type of transistor
N-MOSFET
Technology
SiC
Polarisation
unipolar
Drain-source voltage
1.2kV
Drain current
33A
Pulsed drain current
85A
Power dissipation
250W
Case
TO247-4
Gate-source voltage
-4...18V
On-state resistance
65mΩ
Mounting
THT
Gate charge
60nC
Kind of package
tube
Kind of channel
enhancement
Features of semiconductor devices
Kelvin terminal
Gross weight6.647 g
Certificates

Transfer Multisort Elektronik Sp. z o.o. is an importer of products of this brand

WarningThis product may expose you to chemicals known by the state of California to cause cancer or reproductive harm, for more information go to www.P65Warnings.ca.gov
See other products in this category: THT N channel transistors BASiC SEMICONDUCTOR,
*
B2M065120Z
26 in TME stock
Net price for quantities from 1 pcs - 13.01 USDGross price for quantities from 1 pcs - 13.01 USD
Net price for quantities from 3 pcs - 11.71 USDGross price for quantities from 3 pcs - 11.71 USD
Net price for quantities from 10 pcs - 10.31 USDGross price for quantities from 10 pcs - 10.31 USD
Net price for quantities from 30 pcs - 9.28 USDGross price for quantities from 30 pcs - 9.28 USD
No. of pieces (Multiplicity: 1)
Prices quoted include customs duties and tariffs
Packaging method by the manufacturerTube = 30 pcs