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Manufacturer	TEXAS INSTRUMENTS
Type of transistor	P-MOSFET
Technology	NexFET™
Polarisation	unipolar
Drain-source voltage	-20V
Drain current	-1.6A
Pulsed drain current	-6.5A
Power dissipation	0.5W
Case	PICOSTAR3
Gate-source voltage	±12V
On-state resistance	1070mΩ
Mounting	SMD
Kind of package	reel, tape
Kind of channel	enhancement

CSD25483F4T

Transistor: P-MOSFET; unipolar; -20V; -1.6A; Idm: -6.5A; 500mW

Specification

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