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DG30X07T2

Transistor: IGBT; 650V; 30A; 208W; TO247

Documentation EN
Product family

Manufacturer: STARPOWER SEMICONDUCTOR

Manufacturer part number:
DG30X07T2
TME Symbol:
DG30X07T2

Specification

Manufacturer
STARPOWER SEMICONDUCTOR
Type of transistor
IGBT
Collector-emitter voltage
650V
Collector current
30A
Power dissipation
208W
Case
TO247
Gate-emitter voltage
±20V
Pulsed collector current
90A
Mounting
THT
Gate charge
0.22µC
Kind of package
tube
Turn-on time
0.1µs
Turn-off time
306ns
Features of semiconductor devices
integrated anti-parallel diode
Gross weight6.12 g
Certificates
WarningThis product may expose you to chemicals known by the state of California to cause cancer or reproductive harm, for more information go to www.P65Warnings.ca.gov
See other products in this category: THT IGBT transistors STARPOWER SEMICONDUCTOR,
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DG30X07T2
83 in TME stock
Net price for quantities from 1 pcs - 2.88 USDGross price for quantities from 1 pcs - 2.88 USD
Net price for quantities from 3 pcs - 2.58 USDGross price for quantities from 3 pcs - 2.58 USD
Net price for quantities from 10 pcs - 2.28 USDGross price for quantities from 10 pcs - 2.28 USD
Net price for quantities from 30 pcs - 2.06 USDGross price for quantities from 30 pcs - 2.06 USD
No. of pieces (Multiplicity: 1)
Minimum order quantity: 1.
Multiplicity: 1.
Prices quoted include customs duties and tariffs
Packaging method by the manufacturerTube = 30 pcs