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Manufacturer	DIODES INCORPORATED
Type of transistor	N-MOSFET x2
Polarisation	unipolar
Drain-source voltage	60V
Drain current	3.5A
Pulsed drain current	17A
Power dissipation	2.14W
Case	SO8
Gate-source voltage	±20V
On-state resistance	97mΩ
Mounting	SMD
Gate charge	10.3nC
Kind of package	13 inch reel, tape
Kind of channel	enhancement

DMN6066SSD-13

Transistor: N-MOSFET x2; unipolar; 60V; 3.5A; Idm: 17A; 2.14W; SO8

Specification

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