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Manufacturer	ONSEMI
Type of transistor	N-MOSFET
Polarisation	unipolar
Drain-source voltage	100V
Drain current	164A
Pulsed drain current	656A
Power dissipation	375W
Case	D2PAK
Gate-source voltage	±20V
On-state resistance	4.7mΩ
Mounting	SMD
Gate charge	0.21µC
Kind of package	reel, tape
Kind of channel	enhancement

FDB047N10

Transistor: N-MOSFET; unipolar; 100V; 164A; Idm: 656A; 375W; D2PAK

Specification

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