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Manufacturer	ONSEMI
Type of transistor	N-MOSFET
Polarisation	unipolar
Drain-source voltage	30V
Drain current	80A
Power dissipation	80W
Case	D2PAK
Gate-source voltage	±20V
On-state resistance	9.4mΩ
Mounting	SMD
Gate charge	67nC
Kind of package	reel, tape
Kind of channel	enhancement

FDB8896

Transistor: N-MOSFET; unipolar; 30V; 80A; 80W; D2PAK

Specification

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