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Manufacturer	ONSEMI
Type of transistor	P-MOSFET x2
Technology	PowerTrench®
Polarisation	unipolar
Drain-source voltage	-30V
Drain current	-1.8A
Power dissipation	0.96W
Case	SuperSOT-6
Gate-source voltage	±20V
On-state resistance	0.28Ω
Mounting	SMD
Gate charge	3.5nC
Kind of package	reel, tape
Kind of channel	enhancement

FDC6506P

Transistor: P-MOSFET x2; unipolar; -30V; -1.8A; 0.96W; SuperSOT-6

Specification