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Manufacturer	ONSEMI
Type of transistor	N-MOSFET
Polarisation	unipolar
Drain-source voltage	150V
Drain current	62A
Pulsed drain current	271A
Power dissipation	113W
Case	PQFN8
Gate-source voltage	±20V
On-state resistance	12.4mΩ
Mounting	SMD
Gate charge	45nC
Kind of package	reel, tape
Kind of channel	enhancement

FDMS86255

Transistor: N-MOSFET; unipolar; 150V; 62A; Idm: 271A; 113W; PQFN8

Specification