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FDP3632

Transistor: N-MOSFET; unipolar; 100V; 12A; 310W; TO220AB

Documentation EN
Product family

Manufacturer: ONSEMI

Manufacturer part number:
FDP3632
TME Symbol:
FDP3632

Specification

Manufacturer
ONSEMI
Type of transistor
N-MOSFET
Technology
PowerTrench®
Polarisation
unipolar
Drain-source voltage
100V
Drain current
12A
Power dissipation
310W
Case
TO220AB
Gate-source voltage
±20V
On-state resistance
22mΩ
Mounting
THT
Gate charge
110nC
Kind of package
tube
Kind of channel
enhancement
Gross weight2.013 g
Certificates
WarningThis product may expose you to chemicals known by the state of California to cause cancer or reproductive harm, for more information go to www.P65Warnings.ca.gov
See other products in this category: THT N channel transistors ONSEMI,
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FDP3632
0 in TME stock
Net price for quantities from 1 pcs - 4.27 USDGross price for quantities from 1 pcs - 4.27 USD
Net price for quantities from 10 pcs - 2.55 USDGross price for quantities from 10 pcs - 2.55 USD
Net price for quantities from 50 pcs - 2.39 USDGross price for quantities from 50 pcs - 2.39 USD
No. of pieces (Multiplicity: 1)
Minimum order quantity: 1.
Multiplicity: 1.
Prices quoted include customs duties and tariffs
Packaging method by the manufacturerTube = 50 pcs