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Manufacturer	ONSEMI
Type of transistor	N-MOSFET x2
Polarisation	unipolar
Drain-source voltage	25V
Drain current	20/60A
Power dissipation	1.6/2W
Case	PQFN8
On-state resistance	6/1.8mΩ
Mounting	SMD
Gate charge	19/64nC
Kind of package	reel, tape
Kind of channel	enhancement
Semiconductor structure	asymmetric

FDPC8011S

Transistor: N-MOSFET x2; unipolar; 25V; 20/60A; 1.6/2W; PQFN8

Specification