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Here you will find out moreManufacturer: ONSEMI
Manufacturer | ONSEMI | |
Type of transistor | IGBT | |
Collector-emitter voltage | 650V | |
Collector current | 60A | |
Power dissipation | 153W | |
Case | TO3PN | |
Gate-emitter voltage | ±20V | |
Pulsed collector current | 180A | |
Mounting | THT | |
Gate charge | 84nC | |
Kind of package | tube | |
Features of semiconductor devices | integrated anti-parallel diode |