+1 500 000 products in offer

7000 packages per day

+300 000 clients from 150 countries

You have questions? Call us 678.691.2347 (Mon-Fri 8:00AM - 6:00PM EDT)

We've added a new feature that allows you to schedule a meeting with a consultant. You can find it at the following link: Book an online meeting.

No surprise tariffs – what You see is what You pay

Here you will find out more

Data processing in progress

Your credit limit has been exceeded. Your order will be accepted but not realized. The delivery schedule will not be set. Please contact a TME employee.

The task was successfully completed.

An unexpected error ocurred. Please try again.

Manufacturer	ONSEMI
Type of transistor	IGBT
Collector-emitter voltage	600V
Collector current	40A
Power dissipation	116W
Case	TO247-3
Gate-emitter voltage	±20V
Pulsed collector current	160A
Mounting	THT
Gate charge	0.12µC
Kind of package	tube
Features of semiconductor devices	integrated anti-parallel diode

FGH80N60FDTU

Transistor: IGBT; 600V; 40A; 116W; TO247-3

Specification