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Manufacturer	IXYS
Type of transistor	N-MOSFET x2
Technology	TrenchT2™
Polarisation	unipolar
Drain-source voltage	75V
Drain current	120A
Pulsed drain current	500A
Power dissipation	170W
Case	ISOPLUS i4-pac™ x024a
Gate-source voltage	±30V
On-state resistance	5.8mΩ
Mounting	THT
Gate charge	178nC
Kind of package	tube
Kind of channel	enhancement
Semiconductor structure	double series
Reverse recovery time	66ns

FMM150-0075X2F

Transistor: N-MOSFET x2; TrenchT2™; unipolar; 75V; 120A; Idm: 500A

Specification