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Manufacturer	ONSEMI
Type of transistor	N-MOSFET
Polarisation	unipolar
Drain-source voltage	60V
Drain current	120A
Pulsed drain current	680A
Power dissipation	375W
Case	TO3PN
Gate-source voltage	±25V
On-state resistance	5.6mΩ
Mounting	THT
Gate charge	290nC
Kind of package	tube
Kind of channel	enhancement

FQA170N06

Transistor: N-MOSFET; unipolar; 60V; 120A; Idm: 680A; 375W; TO3PN

Specification