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FQT7N10LTF

Transistor: N-MOSFET; unipolar; 100V; 1.36A; 2W; SOT223

Documentation EN
Product family

Manufacturer: ONSEMI

Manufacturer part number:
FQT7N10LTF
TME Symbol:
FQT7N10LTF

Specification

Manufacturer
ONSEMI
Type of transistor
N-MOSFET
Technology
QFET®
Polarisation
unipolar
Drain-source voltage
100V
Drain current
1.36A
Power dissipation
2W
Case
SOT223
Gate-source voltage
±20V
On-state resistance
0.38Ω
Mounting
SMD
Gate charge
6nC
Kind of package
reel, tape
Kind of channel
enhancement
Gross weight0.153 g
Certificates
WarningThis product may expose you to chemicals known by the state of California to cause cancer or reproductive harm, for more information go to www.P65Warnings.ca.gov
See other products in this category: SMD N channel transistors ONSEMI,
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FQT7N10LTF
1302 in TME stock
Net price for quantities from 1 pcs - 0.76 USDGross price for quantities from 1 pcs - 0.76 USD
Net price for quantities from 500 pcs - 0.39 USDGross price for quantities from 500 pcs - 0.39 USD
Net price for quantities from 1000 pcs - 0.36 USDGross price for quantities from 1000 pcs - 0.36 USD
No. of pieces (Multiplicity: 1)
Minimum order quantity: 1.
Multiplicity: 1.
Prices quoted include customs duties and tariffs
Packaging method by the manufacturerReel = 4 000 pcs