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GD30PJX65F1S

Module: IGBT; diode/transistor; boost chopper; Urmax: 650V; Ic: 30A

Manufacturer: STARPOWER SEMICONDUCTOR

Manufacturer part number:
GD30PJX65F1S
TME Symbol:
GD30PJX65F1S

Specification

Manufacturer
STARPOWER SEMICONDUCTOR
Type of semiconductor module
IGBT
Semiconductor structure
diode/transistor
Topology
boost chopper, IGBT three-phase bridge OE output, NTC thermistor, three-phase diode bridge
Max. off-state voltage
650V
Collector current
30A
Case
F1.1
Electrical mounting
Press-in PCB
Gate-emitter voltage
±20V
Pulsed collector current
60A
Technology
Trench FS IGBT
Mechanical mounting
screw
Gross weight26 g
Certificates
WarningThis product may expose you to chemicals known by the state of California to cause cancer or reproductive harm, for more information go to www.P65Warnings.ca.gov
See other products in this category: IGBT modules STARPOWER SEMICONDUCTOR,
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GD30PJX65F1S
0 in TME stock
Net price for quantities from 25 pcs - 32.01 USDGross price for quantities from 25 pcs - 32.01 USD
No. of pieces (Multiplicity: 25)
Prices quoted include customs duties and tariffs