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Manufacturer	ROHM SEMICONDUCTOR
Type of transistor	N/P-MOSFET
Polarisation	unipolar
Kind of transistor	complementary pair
Drain-source voltage	60/-60V
Drain current	8.5/-8.5A
Pulsed drain current	18A
Power dissipation	7W
Case	HSOP8
Gate-source voltage	±20V
On-state resistance	73/80mΩ
Mounting	SMD
Gate charge	12.3/38nC
Kind of package	reel, tape
Kind of channel	enhancement
Version	ESD

HP8M31TB1

Transistor: N/P-MOSFET; unipolar; complementary pair; 60/-60V

Specification

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