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Manufacturer | INFINEON TECHNOLOGIES | |
Type of transistor | P-MOSFET | |
Technology | HEXFET® | |
Polarisation | unipolar | |
Drain-source voltage | -55V | |
Drain current | -74A | |
Power dissipation | 200W | |
Case | TO262 | |
Gate-source voltage | ±20V | |
On-state resistance | 20mΩ | |
Mounting | THT | |
Gate charge | 0.12µC | |
Kind of channel | enhancement |