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Manufacturer	Infineon (IRF)
Type of transistor	N/P-MOSFET
Technology	HEXFET®
Polarisation	unipolar
Drain-source voltage	55/-55V
Drain current	4.7/-3.4A
Power dissipation	2W
Case	SO8
Gate-source voltage	±20V
On-state resistance	50/105mΩ
Mounting	SMD
Gate charge	24/26nC
Kind of channel	enhancement

IRF7343PBF

Transistor: N/P-MOSFET; unipolar; 55/-55V; 4.7/-3.4A; 2W; SO8

Specification