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Manufacturer	INFINEON TECHNOLOGIES
Type of transistor	N-MOSFET
Technology	HEXFET®
Polarisation	unipolar
Drain-source voltage	200V
Drain current	65A
Power dissipation	330W
Case	TO247AC
Gate-source voltage	±30V
On-state resistance	25mΩ
Mounting	THT
Gate charge	70nC
Kind of package	tube
Kind of channel	enhancement

IRFP4227PBF

Transistor: N-MOSFET; unipolar; 200V; 65A; 330W; TO247AC

Specification