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IXBF20N300

Transistor: IGBT; BiMOSFET™; 3kV; 34A; 150W; ISOPLUS i4-pac™ x024c

Manufacturer: IXYS

Manufacturer part number:
IXBF20N300
TME Symbol:
IXBF20N300

Specification

Manufacturer
IXYS
Type of transistor
IGBT
Technology
BiMOSFET™
Collector-emitter voltage
3kV
Collector current
34A
Power dissipation
150W
Case
ISOPLUS i4-pac™ x024c
Gate-emitter voltage
±20V
Pulsed collector current
130A
Mounting
THT
Gate charge
105nC
Kind of package
tube
Turn-on time
64ns
Turn-off time
0.3µs
Features of semiconductor devices
high voltage
Gross weight5.64 g
Certificates
WarningThis product may expose you to chemicals known by the state of California to cause cancer or reproductive harm, for more information go to www.P65Warnings.ca.gov
See other products in this category: THT IGBT transistors IXYS,
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IXBF20N300
0 in TME stock
Net price for quantities from 1 pcs - 66.98 USDGross price for quantities from 1 pcs - 66.98 USD
Net price for quantities from 3 pcs - 61.26 USDGross price for quantities from 3 pcs - 61.26 USD
Net price for quantities from 10 pcs - 57.18 USDGross price for quantities from 10 pcs - 57.18 USD
No. of pieces (Multiplicity: 1)
Minimum order quantity: 1.
Multiplicity: 1.
Prices quoted include customs duties and tariffs
Packaging method by the manufacturerTube = 25 pcs