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IXBK55N300

Transistor: IGBT; BiMOSFET™; 3kV; 55A; 625W; TO264

Documentation EN
Product family

Manufacturer: IXYS

Manufacturer part number:
IXBK55N300
TME Symbol:
IXBK55N300

Specification

Manufacturer
IXYS
Type of transistor
IGBT
Technology
BiMOSFET™
Collector-emitter voltage
3kV
Collector current
55A
Power dissipation
625W
Case
TO264
Gate-emitter voltage
±20V
Pulsed collector current
600A
Mounting
THT
Gate charge
335nC
Kind of package
tube
Turn-on time
637ns
Turn-off time
475ns
Features of semiconductor devices
high voltage
Gross weight9.87 g
Certificates
WarningThis product may expose you to chemicals known by the state of California to cause cancer or reproductive harm, for more information go to www.P65Warnings.ca.gov
See other products in this category: THT IGBT transistors IXYS,
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IXBK55N300
11 in TME stock
Net price for quantities from 1 pcs - 97.45 USDGross price for quantities from 1 pcs - 97.45 USD
Net price for quantities from 10 pcs - 93.95 USDGross price for quantities from 10 pcs - 93.95 USD
No. of pieces (Multiplicity: 1)
Minimum order quantity: 1.
Multiplicity: 1.
Prices quoted include customs duties and tariffs
Packaging method by the manufacturerTube = 25 pcs