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IXBK75N170

Transistor: IGBT; BiMOSFET™; 1.7kV; 75A; 1.04kW; TO264

Documentation EN
Product family

Manufacturer: IXYS

Manufacturer part number:
IXBK75N170
TME Symbol:
IXBK75N170

Specification

Manufacturer
IXYS
Type of transistor
IGBT
Technology
BiMOSFET™
Collector-emitter voltage
1.7kV
Collector current
75A
Power dissipation
1.04kW
Case
TO264
Gate-emitter voltage
±20V
Pulsed collector current
580A
Mounting
THT
Gate charge
0.35µC
Kind of package
tube
Turn-on time
277ns
Turn-off time
840ns
Features of semiconductor devices
high voltage
Gross weight9.83 g
Certificates
WarningThis product may expose you to chemicals known by the state of California to cause cancer or reproductive harm, for more information go to www.P65Warnings.ca.gov
See other products in this category: THT IGBT transistors IXYS,
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IXBK75N170
0 in TME stock
Net price for quantities from 1 pcs - 68.28 USDGross price for quantities from 1 pcs - 68.28 USD
Net price for quantities from 5 pcs - 62.61 USDGross price for quantities from 5 pcs - 62.61 USD
Net price for quantities from 10 pcs - 58.97 USDGross price for quantities from 10 pcs - 58.97 USD
Net price for quantities from 25 pcs - 56.50 USDGross price for quantities from 25 pcs - 56.50 USD
No. of pieces (Multiplicity: 1)
Minimum order quantity: 1.
Multiplicity: 1.
Prices quoted include customs duties and tariffs
Packaging method by the manufacturerTube = 25 pcs