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Manufacturer	IXYS
Type of transistor	IGBT
Technology	BiMOSFET™
Collector-emitter voltage	1.7kV
Collector current	10A
Power dissipation	150W
Case	TO268
Gate-emitter voltage	±20V
Pulsed collector current	40A
Mounting	SMD
Gate charge	65nC
Kind of package	tube
Turn-on time	43ns
Turn-off time	370ns
Features of semiconductor devices	high voltage

IXBT16N170A

Transistor: IGBT; BiMOSFET™; 1.7kV; 10A; 150W; TO268

Specification