IXBT2N250
Transistor: IGBT; BiMOSFET™; 2.5kV; 2A; 32W; TO268
Manufacturer: IXYS
Manufacturer part number:
IXBT2N250
TME Symbol:
IXBT2N250
Specification
Manufacturer | IXYS | |
Type of transistor | IGBT | |
Technology | BiMOSFET™ | |
Collector-emitter voltage | 2.5kV | |
Collector current | 2A | |
Power dissipation | 32W | |
Case | TO268 | |
Gate-emitter voltage | ±20V | |
Pulsed collector current | 13A | |
Mounting | SMD | |
Gate charge | 10.6nC | |
Kind of package | tube | |
Turn-on time | 310ns | |
Turn-off time | 252ns | |
Features of semiconductor devices | high voltage |
Gross weight4.01 g
Certificates
WarningThis product may expose you to chemicals known by the state of California to cause cancer or reproductive harm, for more information go to www.P65Warnings.ca.gov
See other products in this category: SMD IGBT transistors IXYS,
* IXBT2N250No. of pieces (Multiplicity: 1)
300 in TME stock
Net price for quantities from 1 pcs - 21.08 USDGross price for quantities from 1 pcs - 21.08 USD
Net price for quantities from 10 pcs - 20.27 USDGross price for quantities from 10 pcs - 20.27 USD
Net price for quantities from 30 pcs - 19.45 USDGross price for quantities from 30 pcs - 19.45 USD
Prices quoted include customs duties and tariffs
Packaging method by the manufacturerTube = 30 pcs