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IXBT6N170

Transistor: IGBT; BiMOSFET™; 1.7kV; 6A; 75W; D3PAK


Manufacturer: IXYS

Manufacturer part number:
IXBT6N170
TME Symbol:
IXBT6N170

Specification

Manufacturer
IXYS
Type of transistor
IGBT
Technology
BiMOSFET™, FRED
Collector-emitter voltage
1.7kV
Collector current
6A
Power dissipation
75W
Case
D3PAK
Gate-emitter voltage
±20V
Pulsed collector current
36A
Mounting
SMD
Gate charge
17nC
Kind of package
tube
Turn-on time
104ns
Turn-off time
700ns
Features of semiconductor devices
high voltage
Gross weight3.98 g
Certificates
WarningThis product may expose you to chemicals known by the state of California to cause cancer or reproductive harm, for more information go to www.P65Warnings.ca.gov
See other products in this category: SMD IGBT transistors IXYS,
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IXBT6N170
30 in TME stock
Net price for quantities from 1 pcs - 15.76 USDGross price for quantities from 1 pcs - 15.76 USD
Net price for quantities from 3 pcs - 11.94 USDGross price for quantities from 3 pcs - 11.94 USD
Net price for quantities from 10 pcs - 11.00 USDGross price for quantities from 10 pcs - 11.00 USD
Net price for quantities from 15 pcs - 10.74 USDGross price for quantities from 15 pcs - 10.74 USD
No. of pieces (Multiplicity: 1)
Minimum order quantity: 1.
Multiplicity: 1.
Prices quoted include customs duties and tariffs
Packaging method by the manufacturerTube = 30 pcs