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Manufacturer	IXYS
Type of transistor	IGBT
Technology	BiMOSFET™
Collector-emitter voltage	2.5kV
Collector current	64A
Power dissipation	735W
Case	PLUS247™
Gate-emitter voltage	±20V
Pulsed collector current	600A
Mounting	THT
Gate charge	400nC
Kind of package	tube
Turn-on time	632ns
Turn-off time	397ns
Features of semiconductor devices	high voltage

IXBX64N250

Transistor: IGBT; BiMOSFET™; 2.5kV; 64A; 735W; PLUS247™

Specification