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IXFA7N80P

Transistor: N-MOSFET; Polar™; unipolar; 800V; 7A; 200W; TO263; 250ns

Documentation EN
Product family

Manufacturer: IXYS

Manufacturer part number:
IXFA7N80P
TME Symbol:
IXFA7N80P

Specification

Manufacturer
IXYS
Type of transistor
N-MOSFET
Technology
HiPerFET™, Polar™
Polarisation
unipolar
Drain-source voltage
800V
Drain current
7A
Power dissipation
200W
Case
TO263
Gate-source voltage
±30V
On-state resistance
1.44Ω
Mounting
SMD
Gate charge
32nC
Kind of package
tube
Kind of channel
enhancement
Reverse recovery time
250ns
Gross weight1.538 g
Certificates
WarningThis product may expose you to chemicals known by the state of California to cause cancer or reproductive harm, for more information go to www.P65Warnings.ca.gov
See other products in this category: SMD N channel transistors IXYS,
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IXFA7N80P
9 in TME stock
Net price for quantities from 1 pcs - 4.98 USDGross price for quantities from 1 pcs - 4.98 USD
Net price for quantities from 50 pcs - 2.64 USDGross price for quantities from 50 pcs - 2.64 USD
Net price for quantities from 100 pcs - 2.41 USDGross price for quantities from 100 pcs - 2.41 USD
Net price for quantities from 500 pcs - 2.24 USDGross price for quantities from 500 pcs - 2.24 USD
No. of pieces (Multiplicity: 1)
Minimum order quantity: 1.
Multiplicity: 1.
Prices quoted include customs duties and tariffs
Packaging method by the manufacturerTube = 50 pcs