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IXGF32N170

Transistor: IGBT; NPT; 1.7kV; 19A; 200W; ISOPLUS i4-pac™ x024c

Documentation EN
Product family

Manufacturer: IXYS

Manufacturer part number:
IXGF32N170
TME Symbol:
IXGF32N170

Specification

Manufacturer
IXYS
Type of transistor
IGBT
Technology
NPT
Collector-emitter voltage
1.7kV
Collector current
19A
Power dissipation
200W
Case
ISOPLUS i4-pac™ x024c
Gate-emitter voltage
±20V
Pulsed collector current
200A
Mounting
THT
Gate charge
146nC
Kind of package
tube
Turn-on time
90ns
Turn-off time
920ns
Features of semiconductor devices
high voltage
Gross weight8 g
Certificates
WarningThis product may expose you to chemicals known by the state of California to cause cancer or reproductive harm, for more information go to www.P65Warnings.ca.gov
See other products in this category: THT IGBT transistors IXYS,
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IXGF32N170
0 in TME stock
Net price for quantities from 1 pcs - 25.39 USDGross price for quantities from 1 pcs - 25.39 USD
Net price for quantities from 5 pcs - 22.50 USDGross price for quantities from 5 pcs - 22.50 USD
Net price for quantities from 10 pcs - 20.60 USDGross price for quantities from 10 pcs - 20.60 USD
No. of pieces (Multiplicity: 1)
Minimum order quantity: 1.
Multiplicity: 1.
Prices quoted include customs duties and tariffs