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IXGH50N90B2

Transistor: IGBT; HiPerFAST™; 900V; 50A; 400W; TO247-3


Manufacturer: IXYS

Manufacturer part number:
IXGH50N90B2
TME Symbol:
IXGH50N90B2

Specification

Manufacturer
IXYS
Type of transistor
IGBT
Technology
HiPerFAST™, XPT™
Collector-emitter voltage
900V
Collector current
50A
Power dissipation
400W
Case
TO247-3
Gate-emitter voltage
±20V
Pulsed collector current
200A
Mounting
THT
Gate charge
135nC
Kind of package
tube
Turn-on time
48ns
Turn-off time
820ns
Gross weight6.117 g
Certificates
WarningThis product may expose you to chemicals known by the state of California to cause cancer or reproductive harm, for more information go to www.P65Warnings.ca.gov
See other products in this category: THT IGBT transistors IXYS,
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IXGH50N90B2
120 in TME stock
Net price for quantities from 1 pcs - 7.46 USDGross price for quantities from 1 pcs - 7.46 USD
Net price for quantities from 3 pcs - 6.71 USDGross price for quantities from 3 pcs - 6.71 USD
Net price for quantities from 10 pcs - 5.93 USDGross price for quantities from 10 pcs - 5.93 USD
Net price for quantities from 30 pcs - 5.33 USDGross price for quantities from 30 pcs - 5.33 USD
No. of pieces (Multiplicity: 1)
Minimum order quantity: 1.
Multiplicity: 1.
Product available till the stock lasts
Prices quoted include customs duties and tariffs
Packaging method by the manufacturerTube = 30 pcs