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IXGR32N90B2D1

Transistor: IGBT; HiPerFAST™; 900V; 22A; 160W; PLUS247™

Documentation EN
Product family

Manufacturer: IXYS

Manufacturer part number:
IXGR32N90B2D1
TME Symbol:
IXGR32N90B2D1

Specification

Manufacturer
IXYS
Type of transistor
IGBT
Technology
HiPerFAST™, PT
Collector-emitter voltage
900V
Collector current
22A
Power dissipation
160W
Case
PLUS247™
Gate-emitter voltage
±20V
Pulsed collector current
200A
Mounting
THT
Gate charge
89nC
Kind of package
tube
Turn-on time
42ns
Turn-off time
690ns
Gross weight6 g
Certificates
WarningThis product may expose you to chemicals known by the state of California to cause cancer or reproductive harm, for more information go to www.P65Warnings.ca.gov
See other products in this category: THT IGBT transistors IXYS,
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IXGR32N90B2D1
0 in TME stock
Net price for quantities from 1 pcs - 13.20 USDGross price for quantities from 1 pcs - 13.20 USD
Net price for quantities from 3 pcs - 11.91 USDGross price for quantities from 3 pcs - 11.91 USD
Net price for quantities from 10 pcs - 10.51 USDGross price for quantities from 10 pcs - 10.51 USD
Net price for quantities from 30 pcs - 9.45 USDGross price for quantities from 30 pcs - 9.45 USD
No. of pieces (Multiplicity: 1)
Minimum order quantity: 1.
Multiplicity: 1.
Prices quoted include customs duties and tariffs