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IXTA3N100D2

Transistor: N-MOSFET; unipolar; 1kV; 3A; 125W; TO263; 17ns

Documentation EN
Product family

Manufacturer: IXYS

Manufacturer part number:
IXTA3N100D2
TME Symbol:
IXTA3N100D2

Specification

Manufacturer
IXYS
Type of transistor
N-MOSFET
Polarisation
unipolar
Drain-source voltage
1kV
Drain current
3A
Power dissipation
125W
Case
TO263
On-state resistance
6Ω
Mounting
SMD
Gate charge
1.02µC
Kind of package
tube
Kind of channel
depletion
Reverse recovery time
17ns
Gross weight2.5 g
Certificates
WarningThis product may expose you to chemicals known by the state of California to cause cancer or reproductive harm, for more information go to www.P65Warnings.ca.gov
See other products in this category: SMD N channel transistors IXYS,
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IXTA3N100D2
0 in TME stock
Net price for quantities from 1 pcs - 6.30 USDGross price for quantities from 1 pcs - 6.30 USD
Net price for quantities from 5 pcs - 5.20 USDGross price for quantities from 5 pcs - 5.20 USD
Net price for quantities from 10 pcs - 4.47 USDGross price for quantities from 10 pcs - 4.47 USD
Net price for quantities from 50 pcs - 3.30 USDGross price for quantities from 50 pcs - 3.30 USD
Net price for quantities from 100 pcs - 3.17 USDGross price for quantities from 100 pcs - 3.17 USD
No. of pieces (Multiplicity: 1)
Minimum order quantity: 1.
Multiplicity: 1.
Prices quoted include customs duties and tariffs