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IXTH4N150

Transistor: N-MOSFET; unipolar; 1.5kV; 4A; 280W; TO247-3; 900ns

Documentation EN
Product family

Manufacturer: IXYS

Manufacturer part number:
IXTH4N150
TME Symbol:
IXTH4N150

Specification

Manufacturer
IXYS
Type of transistor
N-MOSFET
Polarisation
unipolar
Drain-source voltage
1.5kV
Drain current
4A
Power dissipation
280W
Case
TO247-3
On-state resistance
6Ω
Mounting
THT
Gate charge
44.5nC
Kind of package
tube
Kind of channel
enhancement
Features of semiconductor devices
standard power mosfet
Reverse recovery time
900ns
Gross weight6.12 g
Certificates
WarningThis product may expose you to chemicals known by the state of California to cause cancer or reproductive harm, for more information go to www.P65Warnings.ca.gov
See other products in this category: THT N channel transistors IXYS,
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IXTH4N150
0 in TME stock
Net price for quantities from 1 pcs - 11.00 USDGross price for quantities from 1 pcs - 11.00 USD
Net price for quantities from 10 pcs - 8.17 USDGross price for quantities from 10 pcs - 8.17 USD
Net price for quantities from 30 pcs - 6.54 USDGross price for quantities from 30 pcs - 6.54 USD
Net price for quantities from 120 pcs - 6.49 USDGross price for quantities from 120 pcs - 6.49 USD
No. of pieces (Multiplicity: 1)
Minimum order quantity: 1.
Multiplicity: 1.
Prices quoted include customs duties and tariffs
Packaging method by the manufacturerTube = 30 pcs